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| PD - 95633 IRF7420PBF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max 14m@VGS = -4.5V 17.5m@VGS = -2.5V 26m@VGS = -1.8V ID -11.5A -9.8A -8.1A Description These P-Channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S 1 2 3 4 8 7 A D D D D S S G 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -11.5 -9.2 -46 2.5 1.6 20 8 -55 to +150 Units V A W mW/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 8/11/04 IRF7420PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 --- --- -0.4 32 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.007 --- --- --- --- --- --- --- --- --- 38 8.1 8.7 8.8 8.8 291 225 3529 1013 656 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 14 VGS = -4.5V, ID = -11.5A 17.5 m VGS = -2.5V, ID = -9.8A 26 VGS = -1.8V, ID = -8.1A -0.9 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -11.5A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 nA VGS = -8V 100 VGS = 8V --- ID = -11.5A --- nC VDS = -6V --- VGS = -4.5V 13 VDD = -6V, VGS = -4.5V ns 13 ID = -1.0A 437 RD = 6 338 RG = 6 --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- 62 61 -2.5 -46 -1.2 93 92 V ns C A Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board, t 10sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7420PBF 100 100 VGS TOP -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP -ID, Drain-to-Source Current (A) 10 -ID, Drain-to-Source Current (A) 10 1 1 -1.0V 20s PULSE WIDTH Tj = 150C 0.1 -1.0V 20s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 0.1 0.1 1 10 100 -VDS Drain-to-Source Voltage (V) , -VDS Drain-to-Source Voltage (V) , Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 2.0 ID = -11.5A -I D , Drain-to-Source Current (A) 1.5 10 T = 150 C J 1.0 1 TJ = 25 C 0.5 0.1 0.5 V DS = -10V 20s PULSE WIDTH 1.0 1.5 2.0 2.5 -VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7420PBF 5500 5000 4500 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 6 ID = -11.5A 5 V DS=-9.6V V DS=-6V C, Capacitance(pF) 4000 3500 3000 2500 2000 1500 1000 500 0 1 Ciss Coss = Cds + Cgd 4 3 Coss Crss 2 1 0 10 100 0 10 20 30 40 50 -VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 C -ID , Drain Current (A) I 100 100us 1 TJ = 25 C 10 1ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7420PBF 12 VDS VGS RD -ID , Drain Current (A) 9 6 VGS Pulse Width 1 s Duty Factor 0.1 % 3 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 0 25 50 TC , Case Temperature ( C) 75 100 125 150 10% Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 100 Thermal Response(Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com + - RG D.U.T. VDD 5 IRF7420PBF ( RDS(on) Drain-to -Source On Resistance) , 0.025 0.020 RDS ( on ) , Drain-to-Source On Resistance ) ( 0.08 0.06 VGS = -1.8V 0.04 0.015 ID = -11.5A 0.010 0.02 VGS = -2.5V 0.005 0.0 2.0 4.0 6.0 8.0 0 0.0 10.0 20.0 VGS = -4.5V 30.0 40.0 50.0 -VGS, Gate -to -Source Voltage (V) -ID , Drain Current ( A ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7420PBF 1.0 0.9 0.8 400 350 300 -VGS(th) ( V ) ID = -250A Power (W) 0.7 0.6 0.5 0.4 0.3 0.2 -75 -50 -25 0 25 50 250 200 150 100 50 0 75 100 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 TJ , Temperature ( C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7420PBF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 8 www.irf.com IRF7420PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 www.irf.com 9 |
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